Warsaw, Poland

Miroslaw Wroblewski



Average Co-Inventor Count = 6.2

ph-index = 2

Forward Citations = 139(Granted Patents)


Company Filing History:


Years Active: 1997-2001

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2 patents (USPTO):Explore Patents

Title: Miroslaw Wroblewski: Innovator in Gallium Nitride Technology

Introduction: Miroslaw Wroblewski is a prominent inventor based in Warsaw, Poland, known for his significant contributions to the field of materials science. With two patents to his name, Wroblewski has established a reputation for innovation in fabrication methods aimed at enhancing the properties of gallium nitride (GaN) materials.

Latest Patents: Among his latest patents is a groundbreaking method of fabrication of highly resistive GaN bulk crystals. This innovative technique involves crystallization from a solution of atomic nitrogen in a molten mixture of metals containing a minimum of 90 atomic percent gallium. The method utilizes periodic table group II metals, such as calcium and beryllium, in concentrations ranging from 0.01 to 10 atomic percent, under specific temperature and pressure conditions. The process is conducted at temperatures between 1300-1700°C and nitrogen pressures of 0.5 to 2.0 GPa, all while maintaining a temperature gradient not exceeding 10°C/cm. Another patent of his includes a method for creating a crystalline multilayer structure at two different pressures, further showcasing his expertise in this cutting-edge field.

Career Highlights: Wroblewski has made significant strides in his career, working at notable institutions such as the High Pressure Research Center at the Polish Academy of Sciences. His research has played an integral role in advancing the fabrication and application of GaN materials, which are crucial in various electronics and optoelectronics technologies.

Collaborations: Throughout his career, Wroblewski has collaborated with esteemed colleagues, including Sylwester Porowski and Izabella Grzegory. These partnerships have fostered a collaborative environment for innovation and have contributed to the successful development of his patents.

Conclusion: Miroslaw Wroblewski is an influential figure in the field of materials science, particularly in the advancements of gallium nitride technology. His innovative methods and collaborations have paved the way for further research and application of highly resistive GaN materials, cementing his place as a key inventor in this area of study.

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