Sylvia G J P Spruytte

Title: Innovations by Sylvia G J P Spruytte

Introduction

Sylvia G J P Spruytte is a notable inventor based in Palo Alto, CA. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for plasma etching of semiconductor wafers.

Latest Patents

Sylvia holds 1 patent for an "End point detection method for plasma etching of semiconductor wafers with low exposed area." This method involves controlling the plasma etching process by determining the impedance of a plasma chamber. It utilizes values representing voltage, current, and the phase angle between them, as provided by a sensor. The method calculates a model using data from a first time period and employs real-time data during a second time period to assess the instant impedance of the chamber. The etching process is halted when the received data deviates from the extrapolated model by a specified amount. In some cases, a rolling average is used to determine the end point condition.

Career Highlights

Sylvia is currently associated with Pivotal Systems Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing methods for plasma etching, which is crucial for the manufacturing of semiconductor devices.

Collaborations

He has collaborated with notable colleagues such as Sumer Johal and Barton Lane, contributing to various projects within the semiconductor industry.

Conclusion

Sylvia G J P Spruytte's innovative methods in plasma etching technology highlight his significant role in the semiconductor field. His contributions continue to influence advancements in this critical area of technology.