Malans, Switzerland

Sven Rieschl

This inventor holds 1 USPTO granted patent. Top assignee: Vat Holding Ag. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sven Rieschl. Retrieved from https://idiyas.com/inventor/sven-rieschl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sven Rieschl: Inventor of a Gas-Distribution Homogenizing Device

Introduction

Sven Rieschl is an inventor based in Malans, Switzerland. His patent work includes a device designed to homogenize gas distribution in a process chamber. The supplied information identifies one patent associated with him: 1 patent.

Latest Patents

Rieschl’s listed patent, “Device for Homogenizing a Gas Distribution in a Process Chamber,” describes an aperture shield moved back and forth between two terminal positions by a linear drive. A heating installation can heat the shield, while an interposed compensation element connects it to the drive and allows relative movement in a direction transverse, preferably orthogonal, to the shield’s linear movement. This arrangement is intended to support more uniform gas distribution within the process chamber.

Career Highlights

The provided information associates Rieschl with VAT Holding AG. His listed invention addresses gas distribution in process equipment through a combination of a movable aperture shield, heating, and a compensating connection to the linear drive.

Collaborations

The supplied data names Samir Jokar and Daniel Dünser as Rieschl’s coworkers. No further details about their roles or specific contributions to the patent are provided.

Conclusion

Sven Rieschl’s listed patent focuses on a mechanically adaptable, heatable aperture shield for homogenizing gas distribution in a process chamber, reflecting his documented contribution to process-equipment innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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