Sven Muehle

Title: Sven Muehle: Semiconductor Process Inventor

Introduction

Sven Muehle is an inventor based in Dresden, Germany, whose patent work focuses on antireflective coating (ARC) and capping layers for semiconductor manufacturing. He is associated with Advanced Micro Devices Corporation and has 2 patents.

Latest Patents

Muehle’s listed patents address nitrogen-free layers designed for use in semiconductor fabrication and 193 nm lithography.

“ Nitrogen-free ARC layer and a method of manufacturing the same” describes an antireflective coating formed by plasma-enhanced chemical vapor deposition (PECVD) using silane and carbon dioxide in a nitrogen-free atmosphere. Its optical properties can be adjusted across a broad range, while maintaining back reflection into the photoresist at 3% or less.

“ Nitrogen-free ARC/capping layer and method of manufacturing the same” concerns a nitrogen-free layer for low-k material stacks. In certain embodiments, the layer comprises carbon-containing silicon dioxide and is tuned for 193 nm lithography. Its direct formation on the low-k material is intended to help preserve the material’s integrity during etching and chemical mechanical polishing.

Career Highlights

Muehle’s patent portfolio reflects work on materials and processes that support lithography and protect low-k layers during semiconductor manufacturing. The listed inventions emphasize nitrogen-free deposition and the adjustment of optical properties for 193 nm applications.

Collaborations

Hartmut Ruelke and Kai Frohberg are identified as Muehle’s coworkers. The available information does not specify their roles in the patents or the nature of their collaboration.

Conclusion

Sven Muehle’s two listed patents focus on nitrogen-free ARC and capping layers, with applications in 193 nm lithography and low-k semiconductor processing.