The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2008

Filed:

Apr. 22, 2005
Applicants:

Kai Frohberg, Meissen, DE;

Sven Muehle, Dresden, DE;

Hartmut Ruelke, Dresden, DE;

Inventors:

Kai Frohberg, Meissen, DE;

Sven Muehle, Dresden, DE;

Hartmut Ruelke, Dresden, DE;

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a nitrogen-free ARC/capping layer in a low-k layer stack, which, in particular embodiments, is comprised of carbon-containing silicon dioxide, wherein the optical characteristics are tuned to conform to the 193 nm lithography. Moreover, the ARC/capping layer is directly formed on the low-k material, thereby also preserving the integrity thereof during an etch and chemical mechanical polishing process.


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