Ludwigshafen, Germany

Sven Hildebrandt

This inventor holds 1 USPTO granted patent and 6 published patent applications and 4 EPO patents. Top assignee: Basf Se Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sven Hildebrandt. Retrieved from https://idiyas.com/inventor/sven-hildebrandt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sven Hildebrandt: Innovator in Silicon Etching Technology

Introduction

Sven Hildebrandt is a notable inventor based in Ludwigshafen, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the area of silicon etching. His innovative approach has led to the development of a unique patent that enhances the efficiency of silicon processing.

Latest Patents

Hildebrandt holds a patent for the "Use of a composition and a process for selectively etching silicon." This patent describes a method that utilizes a specific composition to selectively etch a silicon layer while preserving a silicon germanium alloy layer. The composition includes 4 to 15% by weight of an amine and water, with various chemical components that enhance its effectiveness.

Career Highlights

Sven Hildebrandt is currently associated with BASF SE Corporation, where he applies his expertise in chemical engineering and materials science. His work at BASF has allowed him to explore innovative solutions in semiconductor manufacturing, contributing to advancements in the industry.

Collaborations

Due to space constraints, the details of collaborations will not be included.

Conclusion

Sven Hildebrandt's contributions to silicon etching technology exemplify the impact of innovative thinking in the semiconductor industry. His patent reflects a significant advancement that could influence future manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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