The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jun. 28, 2022
Applicant:
Basf SE, Ludwigshafen am Rhein, DE;
Inventors:
Francisco Javier Lopez Villanueva, Ludwigshafen, DE;
Sven Hildebrandt, Ludwigshafen, DE;
Andreas Klipp, Ludwigshafen, DE;
Assignee:
BASF SE, Ludwigshafen am Rhein, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); C09K 13/00 (2006.01); H01L 21/302 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); C09K 13/00 (2013.01); H01L 21/302 (2013.01); H01L 21/306 (2013.01); H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); H01L 21/311 (2013.01); H01L 21/31105 (2013.01); H01L 21/31111 (2013.01); H01L 21/3213 (2013.01); H01L 21/32133 (2013.01);
Abstract
Described herein is a method of using a composition for selectively etching a silicon layer in the presence of a layer including a silicon germanium alloy, the composition including: (a) 4 to 15% by weight of an amine of formula (E1), and (b) water, where X, X, and Xare independently selected from a chemical bond and C-Calkanediyl; Yis selected from N, CR, and P; Ris selected from H and C-Calkyl.