Yamaguchi, Japan

Suzuka Nishimura

USPTO Granted Patents = 5 

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 113(Granted Patents)


Location History:

  • Yamaguchi, JP (2000 - 2010)
  • Kanagawa, JP (2017)

Company Filing History:


Years Active: 2000-2017

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5 patents (USPTO):Explore Patents

Title: Suzuka Nishimura: Innovator in Semiconductor Technology

Introduction

Suzuka Nishimura is a prominent inventor based in Yamaguchi, Japan. She has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices and GaN-based crystals. With a total of 5 patents to her name, her work continues to influence advancements in this critical area of innovation.

Latest Patents

Nishimura's latest patents include groundbreaking inventions such as an active region containing nanodots, also referred to as 'quantum dots', in a mother crystal formed of zinc blende-type AlInGaN crystal grown on a silicon substrate. This invention provides a structure for high luminance light-emitting devices, including LEDs and LDs. Another notable patent details a method for producing GaN-based crystals, which involves forming a zinc-blend type BP crystal layer on a silicon substrate and creating an In-containing layer to maintain the zinc-blend type structure.

Career Highlights

Throughout her career, Nishimura has worked with notable companies such as Nitto Optical Co., Ltd. and Solartes Lab, Ltd. Her expertise in semiconductor technology has positioned her as a key player in the industry, contributing to various innovative projects and developments.

Collaborations

Nishimura has collaborated with esteemed colleagues, including Kazutaka Terashima and Takuji Tsuzaki. These partnerships have further enhanced her research and development efforts in the semiconductor field.

Conclusion

Suzuka Nishimura's contributions to semiconductor technology and her innovative patents highlight her role as a leading inventor in her field. Her work continues to pave the way for advancements in light-emitting devices and GaN-based crystals.

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