The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Dec. 04, 2015
Applicants:
Nitto Optical Co., Ltd., Tokyo, JP;
Solartes Lab., Ltd., Kanagawa, JP;
Yoko Terashima, Kanagawa, JP;
Inventors:
Assignees:
NITTO OPTICAL CO., LTD., Tokyo, JP;
SOLARTES Lab, LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01); H01L 33/06 (2010.01); H01S 5/02 (2006.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01S 5/021 (2013.01); H01S 5/3412 (2013.01); H01S 5/34333 (2013.01); H01L 33/007 (2013.01); H01S 2301/173 (2013.01); H01S 2304/04 (2013.01);
Abstract
A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blend-type BP layer formed on an Si substrate, an AlInGaN (y≧0, x>0) crystal as a mother crystal maintaining the zinc blend-type crystal structure and In dots having an In concentration higher than that of the AlInGaN (y≧0, x>0) crystal as the mother crystal.