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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9755111 B1

PDFFull Text
Expired
Date of Patent:
Sep. 05, 2017

Filed:

Dec. 04, 2015

Active region containing nanodots (also referred to as 'quantum dots') in mother crystal formed of zinc blende-type (also referred to as 'cubic crystal-type') alyinxgal-y-xn crystal (y[[□]][≧] 0, x > 0) grown on si substrate, and light emitting device using the same (led and ld)

Applicants:

Nitto Optical Co., Ltd., Tokyo, JP;

Solartes Lab., Ltd., Kanagawa, JP;

Yoko Terashima, Kanagawa, JP;

Inventors:

Kazutaka Terashima, Kanagawa, JP;

Suzuka Nishimura, Kanagawa, JP;

Muneyuki Hirai, Kanagawa, JP;

Assignees:

NITTO OPTICAL CO., LTD., Tokyo, JP;

SOLARTES Lab, LTD., Kanagawa, JP;

Attorney:

Maier & Maier, PLLC

Primary Examiner:

Yuanda Zhang

Assistant Examiner:

Michael Carter

Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01); H01L 33/06 (2010.01); H01S 5/02 (2006.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01S 5/021 (2013.01); H01S 5/3412 (2013.01); H01S 5/34333 (2013.01); H01L 33/007 (2013.01); H01S 2301/173 (2013.01); H01S 2304/04 (2013.01);
Abstract

A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blend-type BP layer formed on an Si substrate, an AlInGaN (y≧0, x>0) crystal as a mother crystal maintaining the zinc blend-type crystal structure and In dots having an In concentration higher than that of the AlInGaN (y≧0, x>0) crystal as the mother crystal.

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Terashima, Kazutaka. (2017). Active region containing nanodots (also referred to as 'quantum dots') in mother crystal formed of zinc blende-type (also referred to as 'cubic crystal-type') alyinxgal-y-xn crystal (y[[□]][≧] 0, x > 0) grown on si substrate, and light emitting device using the same (led and ld) (U.S. Patent No. 9755111). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9755111

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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