Company Filing History:
Years Active: 2016-2021
Title: Susumu Hatakenaka: Innovator in Semiconductor Technology
Introduction
Susumu Hatakenaka is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of silicon carbide (SiC) and group III-V nitride semiconductor epitaxial wafers. With a total of 6 patents to his name, Hatakenaka continues to push the boundaries of innovation in this critical area of research.
Latest Patents
Hatakenaka's latest patents include a method for manufacturing SiC epitaxial substrates. This innovative technique involves forming a SiC varied-growth-rate layer on a SiC bulk substrate while increasing the growth speed from an initial rate of 2.0 μm/h or less. The speed change rate of the SiC varied-growth-rate layer is 720 μm/h or less, with a molar flow ratio of nitrogen to carbon when growth starts being 2.4 or less. Another notable patent is for a method of manufacturing group III-V nitride semiconductor epitaxial wafers. This process includes supplying a Ga source gas and a nitrogen source gas to form a GaN channel layer on a semiconductor substrate, followed by a series of temperature adjustments and gas supply changes to create an AlGaInN barrier layer.
Career Highlights
Hatakenaka is currently employed at Mitsubishi Electric Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the company's capabilities in producing high-quality semiconductor materials. His innovative approaches have garnered attention within the industry, establishing him as a key figure in semiconductor research and development.
Collaborations
Some of Hatakenaka's notable coworkers include Atsushi Era and Harunaka Yamaguchi. Their collaborative efforts contribute to the ongoing advancements in semiconductor technology at Mitsubishi Electric Corporation.
Conclusion
Susumu Hatakenaka's contributions to semiconductor technology through his patents and work at Mitsubishi Electric Corporation highlight his role as an influential inventor in the field. His innovative methods for manufacturing SiC and group III-V nitride semiconductor epitaxial wafers continue to shape the future of semiconductor research.