The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
May. 23, 2018
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Susumu Hatakenaka, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02293 (2013.01); H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01);
Abstract
A SiC varied-growth-rate layer () is formed on a SiC bulk substrate () while increasing a growth speed from an initial growth speed of 2.0 μm/h or less. A speed change rate of the SiC varied-growth-rate layer () is 720 μm/hor less. A molar flow ratio of nitrogen to carbon when growth of the SiC varied-growth-rate layer () starts is 2.4 or less.