The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Jan. 07, 2016
Mitsubishi Electric Corporation, Tokyo, JP;
Susumu Hatakenaka, Tokyo, JP;
Harunaka Yamaguchi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A compound semiconductor device includes: a substrate; and a buffer layer, a first carrier supply layer, a first spacer layer, a channel layer, a second spacer layer, a second carrier supply layer, and a contact layer provided in order on the substrate, wherein the first carrier supply layer is a uniformly doped layer in which an impurity is uniformly doped, the second carrier supply layer is a planar doped layer in which an impurity is locally doped, and no Al mixed crystal layer having higher resistance values than the first and second spacer layers is provided between the buffer layer and the first spacer layer and between the second spacer layer and the contact layer.