Susumu Fukuda is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and efficiency of electronic components.

Latest Patents

Fukuda's latest patents include a novel field effect transistor and a Schottky barrier diode with improved characteristics. The field effect transistor features a heterostructure design that comprises a channel layer, barrier layer, and contact layer. This innovative design reduces series resistance between the channel layer and the source (drain) electrode without the need for complicated selective ion implanting or selective epitaxial growing methods. The Schottky barrier diode includes a semiconductor substrate with an ohmic electrode and a Schottky metal electrode. The inclusion of an ohmic portion enhances the rectifying characteristics of the diode, making it more efficient.

Career Highlights

Fukuda has had a successful career at Murata Manufacturing Co., Ltd., where he has been instrumental in developing cutting-edge technologies. His expertise in semiconductor devices has positioned him as a key figure in the industry.

Collaborations

Throughout his career, Fukuda has collaborated with notable colleagues, including Hisashi Ariyoshi and Toru Kasanami. These partnerships have fostered innovation and contributed to the advancement of semiconductor technology.

Conclusion

Susumu Fukuda's contributions to the field of electronics through his patents and collaborations highlight his role as a leading inventor in semiconductor technology. His work continues to influence the industry and pave the way for future innovations.

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