The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1994
Filed:
Mar. 30, 1992
Applicant:
Inventors:
Hisashi Ariyoshi, Kyoto, JP;
Masaaki Sueyoshi, Kyoto, JP;
Kouichi Sakamoto, Kyoto, JP;
Susumu Fukuda, Kyoto, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257457 ; 257472 ; 257473 ; 257916 ; 257484 ; 257750 ;
Abstract
A Schottky barrier diode includes a semiconductor substrate, an ohmic electrode formed on a first region of the semiconductor substrate, and a Schottky metal electrode formed on a second region spaced apart from the first region on the semiconductor substrate. The Schottky electrode includes at least one ohmic portion forming an ohmic contact with the semiconductor substrate, whereby rectifying characteristics of the Schottky barrier diode are improved.
Ariyoshi, Hisashi. (1994). Schottky barrier diode with ohmic portion (U.S. Patent No. 5306943). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5306943
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile