The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1990
Filed:
Oct. 07, 1988
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29 2535 ; 156651 ; 310320 ; 427100 ; 437 54 ; 437228 ;
Abstract
A manufacturing method for an integrated resonator is disclosed wherein a mass of O.sup.+ ions are implanted into a silicon monocrystal substrate from one side thereof, a buried SiO.sub.2 layer is formed by annealing the ion implanted substrate, an SiO.sub.2 layer is formed on the surface of the substrate by oxidizing it, at least one slit is formed on the SiO.sub.2 layer for etching a predetermined area of the silicon monocrystal layer sandwich between two SiO.sub.2 layers to form a cavity and, a piezo-electric resonator is formed on an area of the surfacial SiO.sub.2 layer corresponding to the cavity in the substrate.