Company Filing History:
Years Active: 1994-1996
Title: Susumu Arisaka: Innovator in Gallium Phosphide Technology
Introduction
Susumu Arisaka is a notable inventor based in Annaka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the production of gallium phosphide (GaP) materials. With a total of three patents to his name, Arisaka's work has advanced the capabilities of light-emitting diodes (LEDs) and other electronic devices.
Latest Patents
One of Arisaka's latest patents is a method for producing a gallium phosphide epitaxial wafer. This innovative method enhances the brightness of LEDs by utilizing a GaP epitaxial wafer produced through a refined process. The steps include preparing a GaP layered substrate, eliminating surface irregularities through mechano-chemical polishing, and forming a GaP light-emitting layer composite.
Another significant patent is the method of making a GaP red light-emitting element substrate by liquid phase epitaxy (LPE). This method focuses on doping a large amount of oxygen in the p-type GaP layer while minimizing the development of Ga2O3 precipitates. The process involves careful temperature control and the use of a Ga solution with a high concentration of oxygen to achieve optimal growth conditions.
Career Highlights
Arisaka is currently employed at Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work at this organization has allowed him to further his research and development in GaP technology, contributing to advancements in LED applications.
Collaborations
Throughout his career, Arisaka has collaborated with notable colleagues, including Munehisa Yanagisawa and Yuuki Tamura. These partnerships have fostered innovation and have been instrumental in the development of new technologies in the semiconductor field.
Conclusion
Susumu Arisaka's contributions to gallium phosphide technology have positioned him as a key figure in the semiconductor industry. His innovative methods and collaborative efforts continue to influence the development of brighter and more efficient light-emitting diodes.