Method of making gap red light emitting element substrate by lpe

Abstract

To provide a GaP red light emitting element substrate which a large amount of oxygen is doped in the p-type GaP layer, and which very few Ga.sub.2 O.sub.3 precipitates develop on and/or in p-type GaP layer, and methods of manufacturing said substrate. After the n-type GaP layer 2 is grown on the n-type GaP single crystal substrate 1, when forming the p-type GaP layer 3 doped with Zn and O, on said n-type GaP layer 2 by means of the liquid phase epitaxial growth method, the p-type GaP layer 3 is grown by using a Ga solution with a high concentration of oxygen, and said Ga solution is removed from the substrate 1 to complete the growth when the temperature is lowered to a prescribed temperature of 980.degree. C. or higher. When the temperature has reached the prescribed temperature of 980.degree. C. or higher during the growth using the Ga solution with a high concentration of oxygen, it is also possible to treat said Ga solution to decrease the concentration of the contained oxygen and then continue the growth. It is also possible to conduct the growth using the Ga solution with a high concentration of oxygen until the temperature reaches the prescribed temperature of 980.degree. C. or higher, and then, after switching the growth solution to a Ga solution with a low concentration of oxygen, continue the growth.