Location History:
- Matsuida, JP (1995)
- Matsuida-machi, JP (1996)
Company Filing History:
Years Active: 1995-1996
Title: Hidetoshi Matsumoto: Innovator in Gallium Phosphide Technology
Introduction
Hidetoshi Matsumoto is a notable inventor based in Matsuida, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the production of gallium phosphide (GaP) epitaxial wafers. With a total of two patents to his name, Matsumoto's work has implications for the development of high-brightness light-emitting diodes.
Latest Patents
Matsumoto's latest patents include a method for producing a gallium phosphide epitaxial wafer. This innovative method enhances the brightness of light-emitting diodes compared to those made using conventional techniques. The process involves preparing a GaP layered substrate, eliminating surface irregularities through mechano-chemical polishing, and forming a GaP light-emitting layer composite through liquid phase epitaxial growth.
Another significant patent is the method of making a GaP red light-emitting element substrate by liquid phase epitaxy (LPE). This method allows for a large amount of oxygen to be doped in the p-type GaP layer while minimizing the development of Ga2O3 precipitates. The process includes growing an n-type GaP layer on a single crystal substrate and carefully managing the growth conditions to achieve optimal results.
Career Highlights
Hidetoshi Matsumoto is currently employed at Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work at this organization has allowed him to focus on advancing GaP technology, contributing to the development of more efficient light-emitting devices.
Collaborations
Matsumoto has collaborated with notable colleagues such as Munehisa Yanagisawa and Yuuki Tamura. These partnerships have fostered innovation and have been instrumental in the successful development of his patented technologies.
Conclusion
Hidetoshi Matsumoto's contributions to gallium phosphide technology have positioned him as a key figure in the semiconductor field. His innovative methods for producing high-quality epitaxial wafers are paving the way for advancements in light-emitting diode technology.