This inventor holds 1 USPTO granted patent. Top assignee: Nxp B.v.. Active years: 2020.
Company Filing History:
Years Active: 2020
Title: Sushikha Jain: Innovator in Semiconductor Technology
Introduction
Sushikha Jain is a notable inventor based in Uttar Pradesh, India. He has made significant contributions to the field of semiconductor technology, particularly in the design of memory circuits. His innovative work has led to the development of a patented technology that enhances the performance of SRAM cells.
Latest Patents
Sushikha Jain holds a patent for a "Transistor body bias control circuit for SRAM cells." This semiconductor memory circuit includes a SRAM cell and a bias control circuit designed to bias the SRAM cell effectively. The SRAM cell comprises pull-up, pull-down, and pass-gate transistors. The bias control circuit connects to the body terminals of the pull-down and pass-gate transistors to provide a bias voltage. This bias voltage, which is temperature-dependent, is generated based on junction leakages at the body terminals. The innovative use of a temperature-dependent bias voltage ensures that the write margin and the static noise margin (SNM) of the SRAM cell remain relatively constant and above acceptable levels over a defined temperature range. Sushikha Jain has 1 patent to his name.
Career Highlights
Sushikha Jain is currently employed at NXP B.V., a company known for its advancements in semiconductor technology. His work at NXP B.V. has allowed him to further develop his expertise in memory circuits and contribute to cutting-edge innovations in the industry.
Collaborations
Throughout his career, Sushikha Jain has collaborated with talented individuals such as Jainendra Singh and Deepti Saini. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Sushikha Jain is a prominent figure in the field of semiconductor technology, with a focus on enhancing SRAM cell performance through innovative bias control circuits. His contributions and collaborations continue to shape the future of memory circuit design.
