This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 1993.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1993
Title: Susan L. Kao and Semiconductor Reliability
Introduction
Susan L. Kao is an inventor associated with Intel Corporation and based in Los Altos, California. Her work includes a patented method for reducing hot-electron degradation in semiconductor devices.
Latest Patents
Kao is credited with 1 patent: “Method of Reducing Hot-Electron Degradation in Semiconductor Devices.” The invention describes covering active regions of a field-effect semiconductor device with a protective titanium barrier layer, deposited beneath the metalization layers used to connect devices to bit and word lines. In flash memory devices, this approach is described as improving erase-time performance and reducing excess charge loss associated with hot-electron effects.
Career Highlights
Kao’s patent addresses reliability challenges caused by avalanche injection or tunneling of hot electrons in semiconductor devices. The disclosed titanium barrier layer is intended to limit degradation and support improved device performance.
Collaborations
Kao’s listed coworkers include Stefan K. Lai and Baylor B. Triplett. Her patent work is associated with Intel Corporation.
Conclusion
Susan L. Kao’s patent reflects a focused contribution to semiconductor reliability through a protective-layer approach designed to reduce hot-electron degradation and improve flash-memory performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile