Suryanararyan G Hegde

Title: Suryanararyan G Hegde: Innovator in Transistor Technology

Introduction

Suryanararyan G Hegde is a notable inventor based in Hollowville, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the design of advanced transistor structures. His innovative work has led to the development of a unique double-gate transistor that enhances device performance.

Latest Patents

Suryanararyan G Hegde holds a patent for a "Self-aligned planar double-gate transistor structure." This invention features a double-gate transistor with front and back gates that are laterally aligned. The design includes a back gate thermal oxide layer beneath a device layer, a back gate electrode, and a front gate thermal oxide above the device layer. The front gate electrode is vertically aligned with the back gate electrode, ensuring optimal performance. The transistor body is symmetric with the first gate, and the back gate electrode has an oxide layer formed below the transistor body, positioning it self-aligned with the front gate. Additionally, the transistor includes source and drain electrodes on opposite sides of the transistor body.

Career Highlights

Suryanararyan G Hegde is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the field of semiconductor technology. His work at IBM has allowed him to collaborate with other talented professionals in the industry.

Collaborations

Some of his notable coworkers include Omer H Dokumaci and Bruce Bennett Doris, who contribute to the collaborative environment at IBM.

Conclusion

Suryanararyan G Hegde's contributions to transistor technology exemplify the spirit of innovation in the semiconductor industry. His patented designs are paving the way for advancements in electronic devices, showcasing the importance of research and development in technology.