International Business Machines Corporation

Suryanararyan G Hegde

Bruce Bennett Doris

Omer H Dokumaci

Meikei Ieong

Kathryn Wilder Guarini

Erin C Jones

A double-gate transistor having front (upper) and back gates that are aligned laterally is provided. The double-gate transistor includes a back gate thermal oxide layer below a device layer; a back gate electrode below a back gate thermal oxide layer; a front gate thermal oxide above the device layer; a front gate electrode layer above the front gate thermal oxide and vertically aligned with the back gate electrode; and a transistor body disposed above the back gate thermal oxide layer, symmetric with the first gate. The back gate electrode has a layer of oxide formed below the transistor body and on either side of a central portion of the back gate electrode, thereby positioning the back gate self-aligned with the front gate. The transistor also includes source and drain electrodes on opposite sides of said transistor body.

Growing community of inventors

Hollowville, NY, United States of America

Suryanararyan G Hegde