Halfmoon, NY, United States of America

Sunoo Kim

This inventor holds 1 USPTO granted patent. Top assignee: Globalfoundries U.S. Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sunoo Kim. Retrieved from https://idiyas.com/inventor/sunoo-kim-ivfxacz0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Sunoo Kim: Innovator in Semiconductor Structures

Introduction: Sunoo Kim is a notable inventor based in Halfmoon, NY (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents: Sunoo Kim holds a patent for "Hybrid edge couplers with voids." This patent focuses on semiconductor structures and outlines methods of manufacture. The invention includes a dielectric material, at least one waveguide structure embedded within the dielectric material, and at least one airgap within the dielectric material that extends along the length of the waveguide structure.

Career Highlights: Sunoo Kim is currently employed at GlobalFoundries U.S. Inc., a leading company in semiconductor manufacturing. His work at this organization has allowed him to contribute to cutting-edge technologies in the industry.

Collaborations: Throughout his career, Sunoo has collaborated with various professionals, including his coworker Yusheng Bian. These collaborations have fostered innovation and advancement in their respective fields.

Conclusion: Sunoo Kim's contributions to semiconductor structures through his patent and work at GlobalFoundries U.S. Inc. highlight his role as an influential inventor in the technology sector. His innovative spirit continues to drive advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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