Sunkyu Hwang

Title: Sunkyu Hwang’s Semiconductor and Power Device Patents.

Introduction

Sunkyu Hwang is an inventor based in Suwon, South Korea, whose patent work focuses on semiconductor and power-device technologies. He is associated with Samsung Electronics. His listed portfolio includes 2 patents.

Latest Patents

Hwang’s listed patents address semiconductor device structures and power-device cooling.

“Semiconductor Device Sidewall of the Gate Semiconductor Layer Including a Plurality of Surfaces Having Different Slopes” describes a semiconductor device with a gate semiconductor layer positioned between a barrier layer and a gate electrode. The layer’s sidewall connects its lower and upper surfaces, which differ in area, and includes multiple surfaces with different slopes.

“Power Device and Method of Manufacturing the Same” describes a power device built on a substrate with an epitaxially grown compound semiconductor layer, a gate, and source and drain electrodes. Its design includes a cooling-space region formed within the substrate. The region has an enlargement whose width increases with depth, creating a path intended to support cooling.

Career Highlights

The two listed inventions reflect work on semiconductor device architecture and thermal management in power devices. Both patents describe structural approaches to device performance and fabrication.

Collaborations

Hwang is associated with Samsung Electronics and is listed alongside fellow inventors Joonyong Kim and Boram Kim.

Conclusion

Sunkyu Hwang’s listed patent work spans gate-layer design and substrate-based cooling structures, highlighting two areas of semiconductor and power-device innovation.