Hwaseong-si, South Korea

Sungsoo Ahn

USPTO Granted Patents = 2 

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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2 patents (USPTO):

Title: The Innovations of Sungsoo Ahn

Introduction

Sungsoo Ahn is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of memory devices, holding two patents that showcase his innovative approach to technology. His work is primarily associated with Samsung Electronics Co., Ltd., a leading company in the electronics industry.

Latest Patents

Sungsoo Ahn's latest patents focus on advanced memory devices. One of his patents describes a memory device that includes a substrate and a stacked structure comprising a plurality of gate layers and interlayer insulating layers. This stacked structure features a row of cutouts, each extending in a horizontal direction and designed to cut through the gate layers. The cutouts are strategically arranged in a cell region, enhancing the device's functionality. Additionally, the memory device includes channel structures that penetrate the gate layers, further optimizing performance.

Career Highlights

Throughout his career, Sungsoo Ahn has demonstrated a commitment to innovation in memory technology. His work at Samsung Electronics Co., Ltd. has positioned him as a key player in the development of cutting-edge memory solutions. His patents reflect a deep understanding of the complexities involved in memory device architecture.

Collaborations

Sungsoo Ahn has collaborated with talented coworkers, including Seungmin Song and Beyounghyun Koh. These collaborations have likely contributed to the successful development of his innovative patents.

Conclusion

Sungsoo Ahn's contributions to memory device technology exemplify the spirit of innovation. His patents not only advance the field but also highlight the importance of collaboration in achieving technological breakthroughs.

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