The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Aug. 01, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seungmin Song, Seoul, KR;
Beyounghyun Koh, Seoul, KR;
Yongjin Kwon, Yongin-si, KR;
Kangmin Kim, Hwaseong-si, KR;
Jaehoon Shin, Suwon-si, KR;
Joongshik Shin, Yongin-si, KR;
Sungsoo Ahn, Hwaseong-si, KR;
Seunghwan Lee, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A memory device includes a substrate; a stacked structure including a plurality of gate layers and a plurality of interlayer insulating layers that are alternately stacked on the substrate in a vertical direction, the stacked structure including a row of cutouts, each of the cutouts extending in a first horizontal direction and being configured to cut the plurality of gate layers, the cutouts being apart from each other and arranged in a cell region of the stacked structure in the first horizontal direction; and a row of channel structures, the channel structures being arranged in the cell region in the first horizontal direction, each of the channel structures extending in the vertical direction to penetrate the plurality of gate layers.