Hwaseong-si, South Korea

Sungoh Ahn

USPTO Granted Patents = 4 


Average Co-Inventor Count = 3.6

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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4 patents (USPTO):

Title: Innovations of Sungoh Ahn

Introduction

Sungoh Ahn is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of four patents. His work focuses on enhancing data transmission and reception speeds while minimizing power consumption.

Latest Patents

One of his latest patents involves a memory device that transmits and receives data at high speed and low power. This method utilizes a high bandwidth memory controller, which includes providing a clock signal with a first clock frequency and a write strobe signal with a second clock frequency. The first clock frequency is half of the second clock frequency, and the write strobe signal features two cycles of pre-amble before the write data signal, as well as two cycles of post-amble after the write data signal. This innovative approach significantly improves the efficiency of memory devices.

Career Highlights

Sungoh Ahn is currently employed at Samsung Electronics Co., Ltd., a leading company in technology and electronics. His work at Samsung has allowed him to be at the forefront of advancements in memory technology.

Collaborations

He has collaborated with notable coworkers, including Byongmo Moon and Jihye Kim, contributing to various projects that enhance the capabilities of memory devices.

Conclusion

Sungoh Ahn's contributions to memory technology through his innovative patents and work at Samsung Electronics Co., Ltd. highlight his importance in the field. His advancements in high-speed data transmission and low power consumption are paving the way for future innovations in memory devices.

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