The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Jan. 07, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Byongmo Moon, Seoul, KR;

Sungoh Ahn, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/4074 (2006.01); H01L 25/18 (2006.01); H01L 23/00 (2006.01); G11C 11/4096 (2006.01); G06F 1/10 (2006.01); G06F 1/26 (2006.01); G11C 11/4093 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G06F 1/10 (2013.01); G06F 1/263 (2013.01); G11C 11/4093 (2013.01); G11C 11/4096 (2013.01); H01L 24/16 (2013.01); H01L 25/18 (2013.01); H01L 2224/16146 (2013.01);
Abstract

Disclosed is a memory device, which includes a buffer die that outputs a first power supply voltage to a first through-substrate via (e.g., through-silicon via (TSV)) and receives a small swing data signal from a second TSV generated based on the first power supply voltage, and a core die that is electrically connected to the buffer die through the first and second TSVs, includes a first cell capacitor electrically connected to the first TSV and configured to block a first noise introduced to the first power supply voltage received through the first TSV. The core die outputs the small swing data signal to the second TSV.


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