Suwon, South Korea

Sungbae Kim

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sungbae Kim. Retrieved from https://idiyas.com/inventor/sungbae-kim-ixyo5xhr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sungbae Kim: Semiconductor Helium-Recycling Inventor.

Introduction

Sungbae Kim is an inventor associated with Suwon, South Korea, and Samsung Electronics Ltd. His work includes a patented method for recovering and reusing helium from waste gas generated during semiconductor manufacturing.

Latest Patents

Kim is credited with 1 patent: “Method of Recycling Helium from Waste Gas in Semiconductor Process.” The method treats helium-containing waste gas from a semiconductor facility with a scrubber module, then transports the resulting gas to a purification facility. There, the gas is fractionated to produce helium at a first purity, further purified to a second purity, and returned to the semiconductor facility for reuse.

Career Highlights

The patent describes an approach to recovering helium from semiconductor-process waste gas and returning purified helium to the facility. This process connects waste-gas treatment, gas fractionation, and back-end purification in a recycling system.

Collaborations

The provided information identifies Myungbeom Park and Jongsoo Kim as Kim’s coworkers. It does not specify their roles in the patent or whether they collaborated on this invention.

Conclusion

Sungbae Kim’s listed patent focuses on recycling and purifying helium for reuse in semiconductor manufacturing, reflecting an invention directed at recovering a process gas from facility waste.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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