The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

May. 29, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myungbeom Park, Suwon-si, KR;

Sungbae Kim, Suwon-si, KR;

Jongsoo Kim, Suwon-si, KR;

Samjong Choi, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 23/00 (2006.01); B01D 47/06 (2006.01);
U.S. Cl.
CPC ...
C01B 23/0068 (2013.01); B01D 47/06 (2013.01); C01B 2210/0012 (2013.01); C01B 2210/0018 (2013.01); C01B 2210/002 (2013.01); C01B 2210/0031 (2013.01); C01B 2210/0051 (2013.01); C01B 2210/0062 (2013.01);
Abstract

A method of recycling helium from a waste gas generated in a semiconductor process includes forming a first treatment gas by treating helium-containing waste gas emitted from a semiconductor process facility by using a scrubber module, transporting the first treatment gas to a purification facility, forming a first helium gas with a first purity by fractionating the first treatment gas in the purification facility, forming a second helium gas with a second purity by treating the first helium gas by using a back-end purification module in the purification facility, and providing the second helium gas to the semiconductor process facility.


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