Gyeonggi-do, South Korea

Sung-Wan Joo

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sung-Wan Joo. Retrieved from https://idiyas.com/inventor/sung-wan-joo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: The Innovations of Sung-Wan Joo

Introduction

Sung-Wan Joo is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on memory devices, which are crucial for modern computing.

Latest Patents

Sung-Wan Joo holds a patent for "Semiconductor memory devices with open bitline architectures and methods of controlling the bitlines of such semiconductor memory devices." This invention involves semiconductor memory devices that utilize a unique method of controlling bitlines. The technology allows for efficient precharging of bitlines in memory cell arrays, enhancing performance and reliability.

Career Highlights

Sung-Wan Joo is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His role involves research and development in semiconductor memory technologies. His innovative approach has led to advancements that benefit various applications in electronics.

Collaborations

Sung-Wan Joo has collaborated with talented coworkers such as Ji-hoon Park and Chang-yeong Jeong. Their combined expertise has contributed to the success of their projects and innovations in semiconductor technology.

Conclusion

Sung-Wan Joo's contributions to semiconductor memory devices exemplify the importance of innovation in technology. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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