Sung T Ahn

Title: The Innovations of Sung T Ahn

Introduction

Sung T Ahn is a notable inventor based in Nara, Japan, recognized for his contributions to semiconductor technology. With a total of six patents to his name, Ahn has made significant advancements in methods that enhance the performance and efficiency of semiconductor devices.

Latest Patents

One of Ahn's latest patents is a method for controlling gate size in the semiconductor process. This innovative method involves several steps, including depositing a nitride film on a semiconductor substrate, selectively removing portions of the film, and forming a gate oxide film and electrode. Another significant patent focuses on the application of electronic properties of germanium to inhibit n-type dopant diffusion in silicon. This method utilizes germanium as a diffusion barrier, effectively controlling the introduction of dopants into silicon lattices.

Career Highlights

Throughout his career, Ahn has worked with prominent companies in the semiconductor industry, including National Semiconductor Corporation and Sharp Kabushiki Kaisha Corporation. His work has contributed to the development of advanced semiconductor technologies that are crucial for modern electronics.

Collaborations

Ahn has collaborated with several professionals in his field, including Sheldon Aronowitz and Courtney L Hart. These collaborations have further enriched his research and innovations in semiconductor technology.

Conclusion

Sung T Ahn's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a significant inventor. His innovative methods continue to influence the development of efficient semiconductor devices.