Yongin, South Korea

Sung In Hwang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sung In Hwang. Retrieved from https://idiyas.com/inventor/sung-in-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: The Innovations of Sung In Hwang

Introduction

Sung In Hwang is a notable inventor based in Yongin, South Korea. He has made significant contributions to the field of image sensor technology. His work focuses on enhancing the sensitivity and performance of CMOS image sensors.

Latest Patents

Hwang holds a patent for an innovative image sensor that features a passivation layer exposing at least a main pixel array region. This technology improves the optical sensitivity of the sensor by eliminating optical absorption and refraction caused by the passivation layer material. The patent is titled "Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same." Hwang's patent portfolio includes 1 patent.

Career Highlights

Sung In Hwang is currently employed at Samsung Electronics Co., Ltd., where he continues to develop cutting-edge technologies in image sensing. His work has contributed to advancements in consumer electronics and imaging systems.

Collaborations

Hwang has collaborated with talented colleagues such as Young Hoon Park and Soo Cheol Lee. Their combined expertise has fostered innovation within their projects at Samsung.

Conclusion

Sung In Hwang's contributions to image sensor technology exemplify the impact of innovative thinking in the electronics industry. His work continues to influence advancements in imaging technology, showcasing the importance of research and development in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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