The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Jan. 27, 2005
Young Hoon Park, Yongin, KR;
Ki Hong Kim, Yongin, KR;
Bum Suk Kim, Yongin, KR;
Jeong Hoon Bae, Yongin, KR;
Yu Jin Ahn, Seoul, KR;
Jung Chak Ahn, Suwon, KR;
Soo Cheol Lee, Seoul, KR;
Yong Jei Lee, Yongin, KR;
Sung IN Hwang, Yongin, KR;
Young Hoon Park, Yongin, KR;
Ki Hong Kim, Yongin, KR;
Bum Suk Kim, Yongin, KR;
Jeong Hoon Bae, Yongin, KR;
Yu Jin Ahn, Seoul, KR;
Jung Chak Ahn, Suwon, KR;
Soo Cheol Lee, Seoul, KR;
Yong Jei Lee, Yongin, KR;
Sung In Hwang, Yongin, KR;
Abstract
A CMOS image sensor with improved sensitivity includes a main pixel array region of an active pixel array region formed on a semiconductor substrate. A passivation layer is formed over the sensor, and it is at least partially removed from the main pixel array region, such that incident light being detected by the main pixel array does not pass through the passivation layer. Optical absorption and refraction caused by the material of the passivation layer are eliminated, resulting in an image sensor with improved optical sensitivity.