Sung-Hoan Kim

Title: Innovations of Sung-Hoan Kim in Field Effect Transistors

Introduction

Sung-Hoan Kim is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of electronics, particularly in the development of field effect transistors. With a total of 6 patents to his name, Kim's work has advanced the technology used in modern electronic devices.

Latest Patents

One of Kim's latest patents is focused on a field effect transistor with a high breakdown voltage and the method of manufacturing it. This invention discloses an electric field effect transistor designed to withstand higher voltages. A recessed portion is formed at the channel region and is filled with a protective oxide layer. Lightly doped source and drain regions are created beneath this protective layer, which safeguards them from damage. The protective oxide layer also prevents the electric field from concentrating at the bottom corner of the gate structure. Furthermore, the effective channel length is elongated by connecting an electric power source to heavily doped source and drain regions from an external source, rather than to the lightly doped regions.

Career Highlights

Sung-Hoan Kim is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to collaborate with other talented professionals in the field, enhancing the innovation process.

Collaborations

One of his notable coworkers is Ji-Su Kim, with whom he has likely shared insights and expertise in their projects.

Conclusion

Sung-Hoan Kim's contributions to the field of field effect transistors demonstrate his innovative spirit and technical expertise. His patents reflect a commitment to advancing electronic technology, making a significant impact in the industry.