Company Filing History:
Years Active: 2025
Title: Sunao Kamimura: Innovator in Metal Oxide Thin Films
Introduction
Sunao Kamimura is a prominent inventor based in Yokosuka, Japan. He has made significant contributions to the field of materials science, particularly in the development of processes for forming metal oxide thin films. His innovative work addresses critical challenges in electrochemical behaviors of electrodes.
Latest Patents
Kamimura holds a patent for "Processes for forming metal oxide thin films on electrode interphase control." This invention provides a novel solution to form an artificial interphase on the electrode to protect it from fast declining electrochemical behaviors. By depositing a Metal Oxides Layer using Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD), the film is designed to be thin, possibly discontinuous, and lithium ion conductive enough. This allows for fast lithium ion transfer at the interface between the electrode and electrolyte. He has 1 patent related to this groundbreaking technology.
Career Highlights
Kamimura is currently employed at L'air Liquide, Société Anonyme Pour L'étude Et L'exploitation Des Procédés Georges Claude. His work at this esteemed company has allowed him to further his research and development in advanced materials.
Collaborations
Throughout his career, Kamimura has collaborated with notable colleagues, including Christian Dussarrat and Sanghoon Kim. These partnerships have contributed to the advancement of his research and the successful implementation of his inventions.
Conclusion
Sunao Kamimura's innovative work in metal oxide thin films has the potential to significantly impact the field of electrochemistry. His contributions continue to pave the way for advancements in energy storage technologies.