L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Sunao Kamimura

Christian Dussarrat

Nicolas Blasco

Jean-Marc Girard

Masahiro Suzuki

Takashi Teramoto

Masato Hirai

Keishi Yamamoto

Grigory Nikiforov

Sanghoon Kim

A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.

Devices having a rare earth (oxy) fluoride coating for improved resistance to corrosive chemical environments and methods for making and using these devices

This invention provides a novel solution to form an artificial interphase on the electrode to protect it from fast declining electrochemical behaviors, by depositing Metal Oxides Layer, by ALD or CVD. Metals discussed here are IVA-VIA elements (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W). The film needs to be thin, possibly discontinuous, and lithium ion conductive enough, so that the addition of this thin film interface allows fast lithium ion transfer at the interface between electrode and electrolyte.

Processes for forming metal oxide thin films on electrode interphase control

Methods for forming a Li-containing film, islet or cluster on a substrate comprise the steps of introducing a vapor of a silicon-free lithium precursor into a reactor and depositing at least part of the silicon-free lithium precursor onto the substrate to form the Li-containing film, islet or cluster using a vapor deposition method.

Lithium precursors for deposition of lithium-containing layers, islets or clusters

Growing community of inventors

Yokosuka, Japan

Sunao Kamimura