Gyeonggi-do, South Korea

Sun Kwon Ahn

This inventor holds 1 USPTO granted patent. Top assignee: Dongwoo Fine-Chem Co., Ltd.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sun Kwon Ahn. Retrieved from https://idiyas.com/inventor/sun-kwon-ahn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations of Sun Kwon Ahn

Introduction

Sun Kwon Ahn is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of conductive materials, particularly through his innovative patent.

Latest Patents

One of his key patents is for a conductive film laminate and method of fabricating the same. This patent describes a conductive film laminate that includes a carrier substrate, a conductive film liner on the carrier substrate, and a conductive adhesive film formed on the conductive film liner. The design allows for a cut pattern that does not cover the entire carrier substrate, enabling stable supply of the conductive adhesive film with a narrow width. This adhesive film can be utilized as an anisotropic conductive film for bonding processes in touch sensors.

Career Highlights

Sun Kwon Ahn is currently associated with Dongwoo Fine-chem Co., Ltd., where he continues to develop innovative solutions in the field of conductive materials. His work has been instrumental in advancing technologies that rely on efficient conductive films.

Collaborations

He collaborates with Hyuk Hwan Kwon, contributing to the development of new technologies and enhancing the capabilities of their projects.

Conclusion

Sun Kwon Ahn's contributions to the field of conductive materials through his innovative patents highlight his role as a significant inventor in the industry. His work continues to influence advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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