Pohang-si, South Korea

Sujin Heo

This inventor holds 1 USPTO granted patent. Top assignees: Daegu Gyeongbuk Institute of Science and Technology, Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sujin Heo. Retrieved from https://idiyas.com/inventor/sujin-heo-mif662yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sujin Heo: Inventor of a Vacuum Tunneling Device

Introduction

Sujin Heo is an inventor associated with Pohang-si, South Korea. Her listed patent work concerns a vacuum tunneling device and a method for manufacturing it. The available information credits her with 1 patent.

Latest Patents

Heo’s listed patent is “Vacuum Tunneling Device and Method of Manufacturing the Same.” The method describes forming a tunneling device on a substrate, then adding an insulating interlayer with an opening that exposes the device. A gradient deposition process in a vacuum chamber forms a sealing layer on the interlayer, filling the upper portion of the opening.

Career Highlights

Heo’s professional affiliations include Samsung Electronics and the Daegu Gyeongbuk Institute of Science and Technology. Her patent describes a fabrication approach for sealing a tunneling device within a layered structure.

Collaborations

Changhoon Jeon and Jaeeun Jang are identified as Heo’s coworkers. Their names provide context for her professional network, though the available information does not specify their roles in the patent.

Conclusion

Sujin Heo’s listed invention focuses on a vacuum tunneling device and a manufacturing method that uses gradient deposition to form a sealing layer. Her patent record and affiliations connect her work with electronics and research institutions in South Korea.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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