Company Filing History:
Years Active: 2021-2024
Title: The Innovative Mind of Su Hyeong Lee: A Pioneer in Vertical-Type Memory Devices
Introduction: Su Hyeong Lee, an inventive force hailing from Suwon-si, South Korea, has made significant strides in the development of advanced semiconductor technologies. With a total of four patents to his name, Lee is recognized as a prominent inventor in the field, particularly in the domain of vertical-type memory devices.
Latest Patents: Among his latest innovations, Lee's patents include a groundbreaking design for a vertical-type memory device. This device features a series of gate electrodes stacked upon a substrate, complemented by a vertical channel structure that extends through these electrodes. The vertical channel structure is intricately designed, incorporating a first filling film that partially occupies the channel, as well as a first liner enriched with n-type impurities. Furthermore, his work includes a comprehensive methodology for manufacturing a three-dimensional semiconductor device that integrates both first and second channels, alongside buried insulation and conductive patterns.
Career Highlights: Currently, Lee is an integral part of Samsung Electronics Co., Ltd., a leading global technology company. His work focuses on pushing the boundaries of semiconductor design and functionality. After accumulating a wealth of experience, Lee has established himself as an essential contributor to advancements in memory technology.
Collaborations: Within the innovative environment of Samsung, Lee collaborates closely with esteemed colleagues such as Eun Yeoung Choi and Hyung Joon Kim. These collaborations facilitate the exchange of ideas and inspire innovative strides in semiconductor technology that benefit the industry as a whole.
Conclusion: Su Hyeong Lee exemplifies the spirit of innovation that drives the world of technology forward. With his impressive portfolio of patents and a commitment to excellence at Samsung Electronics Co., Ltd., Lee continues to influence the future of semiconductor devices. His contributions enhance our understanding of vertical memory technology and pave the way for new developments in the field.