This inventor holds 2 USPTO granted patents. Top assignees: STMicroelectronics, Centre National De La Recherche Scientifique. Active years: 2006-2008.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Grenoble, FR (2006)
- Theys, FR (2008)
Company Filing History:


Years Active: 2006-2008
Title: Stéphanie Dournelle: Innovator in Electrostatic Discharge Protection
Introduction
Stéphanie Dournelle is a notable inventor based in Theys, France. He has made significant contributions to the field of electrostatic discharge protection, holding 2 patents that showcase his innovative approach to circuit design.
Latest Patents
His latest patents include a "Protection of an Integrated Circuit Against Electrostatic Discharges," which describes a circuit designed to detect leakage currents and protect sensitive components. This circuit features a first MOS transistor for detecting leakage current and a second MOS transistor that acts as a switch to connect the nodes. Additionally, he has developed an "Electrostatic Discharge Protection Device Comprising Several Thyristors." This device utilizes multiple thyristors connected in parallel to safeguard electrical circuits from voltage variations, with a control circuit that triggers the thyristors to conduct current when necessary.
Career Highlights
Stéphanie has worked with prominent organizations such as STMicroelectronics and the Centre National De La Recherche Scientifique. His experience in these institutions has allowed him to refine his expertise in circuit protection technologies.
Collaborations
He has collaborated with notable colleagues, including Pascal Salome and Florence Azais, contributing to advancements in their respective fields.
Conclusion
Stéphanie Dournelle's work in electrostatic discharge protection highlights his innovative spirit and dedication to improving circuit safety. His patents reflect a deep understanding of electronic components and their vulnerabilities, making him a valuable contributor to the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile