This inventor holds 2 USPTO granted patents. Top assignee: Motorola Corporation. Active years: 1985-1986.
Location History:
- Mesa, AZ (US) (1985)
- Tucson, AZ (US) (1986)
Company Filing History:
Years Active: 1985-1986
Title: Steven C. Thornquist: Innovator in Plasma Etching Technologies
Introduction
Steven C. Thornquist is a notable inventor based in Mesa, AZ, who has made significant contributions to the field of plasma etching technologies. With a total of 2 patents, his work focuses on innovative methods for etching materials used in semiconductor manufacturing.
Latest Patents
Thornquist's latest patents include a method for selective plasma etching of silicon nitride in the presence of silicon. This invention allows silicon nitride to be etched at a rapid rate selectively against oxide using a gas plasma formed from a mixture of 10-20 parts NF₃ to 20-35 parts O₂ by volume. The etch rates achieved range from 55 to 75 milli-microns per minute, with etch rate ratios of 8-11:1. Notably, this method avoids carbon deposition on substrate wafers or reactor walls, which is a common issue in prior art methods. Additionally, he has developed a process for etching tapered polyimide vias, which involves creating openings with tapered sidewalls in a polyimide-oxide-polyimide integrated circuit structure.
Career Highlights
Steven C. Thornquist has had a distinguished career at Motorola Corporation, where he has applied his expertise in semiconductor technologies. His innovative approaches have contributed to advancements in the manufacturing processes of integrated circuits.
Collaborations
Thornquist has collaborated with Yefim Bukhman, a fellow innovator, to further enhance the development of etching technologies.
Conclusion
Steven C. Thornquist's contributions to plasma etching technologies have positioned him as a key figure in the semiconductor industry. His innovative patents reflect his commitment to advancing manufacturing processes and improving efficiency in the field.