The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1986
Filed:
Dec. 20, 1984
Applicant:
Inventor:
Steven C Thornquist, Tucson, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156653 ; 156657 ; 2041 / ; 252 791 ;
Abstract
Silicon nitride can be etched at a rapid rate selectively against oxide in a gas plasma formed from a gas mixture comprising 10-20 parts NF.sub.3 to 20-35 parts O.sub.2, by volume. Silicon nitride etch rates in the range 55 to 75 milli-microns per minute are obtained at nitride/oxide etch rate ratios of 8-11:1. In contrast to the prior art methods, the invented gas system contains no carbon. Hence, deposition of carbon complexes on the substrate wafers or reactor walls during nitride etching is avoided. The NF.sub.3 +O.sub.2 gas mixture also etches common resists.