Albuquerque, NM, United States of America

Stephen Wayne Howell

This inventor holds 7 USPTO granted patents and 1 published patent application. Top assignees: National Technology & Engineering Solutions of Sandia, LLC, Sandia Corporation, Parker-Hannifin Corporation. Active years: 2009-2022.

USPTO Granted Patents = 7 

% Patents Active = 85.7

Average Co-Inventor Count = 4.9

ph-index = 4

Forward Citations = 40(Granted Patents)


Location History:

  • Albuquerque, NM (US) (2009 - 2020)
  • Bloomington, IN (US) (2022)

Company Filing History:


Years Active: 2009-2022

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7 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Stephen Wayne Howell

Introduction

Stephen Wayne Howell is a prominent inventor based in Albuquerque, NM (US). He holds a total of 7 patents that showcase his expertise in the field of infrared technology and materials science. His work has significantly advanced the capabilities of infrared detection and imaging.

Latest Patents

One of his latest patents is titled "Tunable infrared pixels having unpatterned graphene layer and conductive metasurface." This invention features a monolithically integrated, tunable infrared pixel that combines a broadband detector with a graphene-enabled tunable metasurface filter. The device operates as a single solid-state unit without any moving parts. The tunability is achieved through the plasmonic properties of graphene, which are highly dependent on the carrier concentration within the infrared spectrum. By inducing voltage changes in graphene's carrier concentration, the metasurface filter's transmission can be altered, affecting the 'colors' of light that reach the broadband detector and its spectral responsivity. This innovation allows for spectrally agile infrared detection with independent pixel-to-pixel spectral tunability.

Another significant patent is the "Radiation detector using a graphene amplifier layer." This invention involves detecting or imaging a radiation field using junction devices where a two-dimensional conductor layer is capacitively coupled to a semiconductor absorber layer. In these junction devices, pixel-level amplification and read-out are achieved through the photogating of the devices by absorption within the absorber layer while in a state of deep depletion. When the two-dimensional conductor is graphene, the device is referred to as a deeply depleted graphene-oxide-semiconductor (DGOS) detector.

Career Highlights

Stephen has worked with notable organizations such as National Technology & Engineering Solutions of Sandia, LLC and Sandia Corporation. His contributions to these companies have been instrumental in advancing research and development in the field of infrared technologies.

Collaborations

Throughout his career, Stephen has collaborated with esteemed colleagues, including Thomas Edwin Beechem, III and David W. Peters. These partnerships have fostered innovation and have led to the successful development of groundbreaking technologies.

Conclusion

Stephen Wayne Howell's innovative work in the field of infrared technology has made a significant impact on the industry. His patents reflect a deep understanding of materials science and a commitment to advancing detection technologies. His contributions continue to influence the future of infrared applications.

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