The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Oct. 17, 2018
Applicant:

National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);

Inventors:

Stephen W. Howell, Bloomington, IN (US);

David W. Peters, Albuquerque, NM (US);

Thomas Edwin Beechem, III, Albuquerque, NM (US);

Isaac Ruiz, Albuquerque, NM (US);

Richard Karl Harrison, Albuquerque, NM (US);

Jeffrey B. Martin, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/17 (2006.01); H01L 27/146 (2006.01); H01L 31/028 (2006.01); G01T 1/185 (2006.01); H01L 31/119 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
G01T 1/17 (2013.01); G01T 1/185 (2013.01); H01L 27/14659 (2013.01); H01L 31/028 (2013.01); H01L 31/119 (2013.01); H01L 29/1606 (2013.01);
Abstract

A radiation field is detected or imaged using one or more junction devices in which a two-dimensional conductor layer is capacitively coupled to a semiconductor absorber layer. In the junction devices, pixel-level amplification and read-out are accomplished through the photogating of the devices by absorption within the absorber layer while it is in a state of deep depletion. When the two-dimensional conductor is graphene, we refer to a device operating in that manner as a deeply depleted graphene-oxide-semiconductor (DGOS) detector.


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