Company Filing History:
Years Active: 1976-1981
Title: Innovations of Stephen E Bernacki
Introduction
Stephen E Bernacki is a notable inventor based in Worcester, MA (US). He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work primarily focuses on dielectric isolation techniques that enhance the performance of electronic circuits.
Latest Patents
One of Bernacki's latest patents is titled "Dielectric isolation using shallow oxide and polycrystalline silicon." This process combines polycrystalline isolation of collectors with shallow oxide isolation of bases. The approach provides deep dielectric isolation, surface planarity, and high density of walled emitter geometries, which were previously unattainable by other means. This isolation scheme has been effectively used to fabricate ECL gate chains. The transistors are located in 2.5 micron thick n epi islands, surrounded by polysilicon selectively oxidized with silicon nitride masking. The oxide bump at the nitride mask typically measures 3000 A, while the epi-poly step height can be as small as 2600 A. The circuits incorporate polysilicon resistors and are fabricated using both thermal diffusion and ion implantation. Notably, the power-delay product of these circuits is approximately one-half that of junction isolated circuits.
Career Highlights
Stephen E Bernacki is affiliated with the Massachusetts Institute of Technology, where he continues to innovate in the field of semiconductor technology. His work has had a profound impact on the design and efficiency of electronic components.
Collaborations
Some of his notable coworkers include Jack I Raffel and Jack I Raffai, who have collaborated with him on various projects.
Conclusion
Stephen E Bernacki's contributions to semiconductor technology through his innovative patents have significantly advanced the field. His work continues to influence the design and efficiency of electronic circuits.