Eindhoven, Netherlands

Stephan Van Reenen

This inventor holds 1 USPTO granted patent. Top assignee: Asml Netherlands. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Stephan Van Reenen. Retrieved from https://idiyas.com/inventor/stephan-van-reenen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Stephan Van Reenen: Lithography Focus-Control Innovation

Introduction

Stephan Van Reenen is an inventor based in Eindhoven, the Netherlands. His work includes a patented method for determining focus actuation profiles in lithographic exposure apparatuses. He is associated with ASML Netherlands and has 1 patent listed in the provided information.

Latest Patents

Van Reenen’s patent, “Method for determining a focus actuation profile for one or more actuators of a lithographic exposure apparatus,” concerns controlling a lithographic exposure process across an exposure area with at least two topographical levels. The method determines a continuous, single focus actuation profile for those levels using an objective function with a component that optimizes a focus metric for each level.

Career Highlights

The patent reflects work on focus control in lithography, where maintaining suitable focus across different surface heights is important to the exposure process. Van Reenen is associated with ASML Netherlands, a company working in lithographic exposure technology.

Collaborations

The provided information identifies Simon Hendrik Celine Van Gorp as Van Reenen’s coworker. No further details about their specific collaboration are available.

Conclusion

Stephan Van Reenen’s listed patent addresses focus-profile determination for lithographic exposure across multiple topographical levels, highlighting a contribution to precision control in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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