Bondorf, Germany

Stephan Krügel

This inventor holds 1 USPTO granted patent. Top assignee: Advanced Micro Devices Corporation. Active years: 2005.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: The Innovations of Stephan Krügel

Introduction

Stephan Krügel is a notable inventor based in Boxdorf, Germany. He has made significant contributions to the field of semiconductor technology. His work focuses on improving the reliability of oxide layers in semiconductor surfaces.

Latest Patents

Stephan Krügel holds 1 patent for his innovative method of forming a thin oxide layer having improved reliability on a semiconductor surface. This method involves an annealing step performed immediately before oxidizing a substrate. The annealing is conducted in an inert gas ambient to prevent premature oxidation of the semiconductor surface. This technique is particularly beneficial for creating a reliable and ultra-thin gate oxide layer for MOS transistors. The process minimizes the thermal budget by carrying out the annealing and oxidizing steps as an in situ process.

Career Highlights

Stephan Krügel is associated with Advanced Micro Devices Corporation, a leading company in the semiconductor industry. His work has contributed to advancements in semiconductor manufacturing processes, enhancing the performance and reliability of electronic devices.

Collaborations

Stephan has collaborated with notable colleagues, including Karsten Wieczorek and Falk Graetsch. Their combined expertise has fostered innovation within their projects.

Conclusion

Stephan Krügel's contributions to semiconductor technology exemplify the importance of innovation in enhancing electronic device performance. His patented method for forming reliable oxide layers is a testament to his expertise and dedication to advancing the field.

Profile summary based on public USPTO records.
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