Aachen, Germany

Stefan Tappertzhofen


 

Average Co-Inventor Count = 6.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2015-2016

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2 patents (USPTO):Explore Patents

Title: The Innovations of Stefan Tappertzhofen

Introduction

Stefan Tappertzhofen is a notable inventor based in Aachen, Germany. He has made significant contributions to the field of memory technology, particularly in the development of methods for reading resistive memory elements. With a total of 2 patents to his name, his work has implications for non-volatile memory systems.

Latest Patents

Tappertzhofen's latest patents include a method for capacitively reading resistive memory elements and a method for nondestructively reading resistive memory elements. The first patent describes a technique for reading a non-volatile memory element that has two stable states, 0 and 1. This memory element utilizes resistive memory cells to encode these states, which are characterized by differing capacitances. The method enhances signal strength during capacitive read-out by connecting a fixed capacitance in series with the memory cell. The second patent outlines a method for reading memory elements in a series connection, allowing for the distinction of state combinations without altering the logic state during reading.

Career Highlights

Throughout his career, Tappertzhofen has worked with prominent organizations such as Forschungszentrum Jülich GmbH and Rheinisch-Westfälische Technische Hochschule Aachen (RWTH). His experience in these institutions has contributed to his expertise in memory technology and innovation.

Collaborations

Some of his notable coworkers include Eike Linn and Ilia Valov. Their collaboration has likely fostered advancements in the research and development of memory technologies.

Conclusion

Stefan Tappertzhofen's contributions to the field of memory technology through his innovative patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in non-volatile memory systems.

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