This inventor holds 1 USPTO granted patent. Top assignee: C2amps Ab. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Stefan Andric and Semiconductor Innovation.
Introduction
Stefan Andric is an inventor based in Lund, Sweden. His patent work concerns semiconductor structures designed to form multiple transistors, and he is associated with C2amps AB.
Latest Patents
Andric is credited with one patent: “Semiconductor Structure Forming a Plurality of Transistors.” The disclosed structure includes a source layer and multiple vertical nanowires extending from it. Spacer layers and gate layers surround the nanowires, while a drain layer contacts each nanowire.
The gate layer contains two gates, each with multiple gate fingers. The fingers of the two gates are interleaved, and each gate controls a separate transistor. This arrangement describes a semiconductor structure that integrates multiple transistors around vertical nanowires.
Career Highlights
Andric’s listed patent highlights his work on transistor architecture and semiconductor device design. His affiliation with C2amps AB connects this work to a company focused on semiconductor technology.
Collaborations
Simon Olson and Tobias Tired are identified as Andric’s coworkers. The available information does not specify their roles in the patent or the extent of their collaboration.
Conclusion
Stefan Andric’s patent describes an interleaved, nanowire-based structure for forming multiple transistors, reflecting his contribution to semiconductor innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile